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AUIRLR120N

Infineon
Part Number AUIRLR120N
Manufacturer Infineon
Description Power MOSFET
Published Dec 8, 2016
Detailed Description AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT R...
Datasheet PDF File AUIRLR120N PDF File

AUIRLR120N
AUIRLR120N

Overview
AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
VDSS RDS(on) ID AUIRLR120N HEXFET® Power MOSFET 100V max.
0.
185 10A D G Gate S G D-Pak AUIRLR120N D Drain S Source Base part number AUIRLR120N Package Type D-Pak Standard Pack Form Quantity Tube ...


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