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AUIRLS3036-7P

Infineon
Part Number AUIRLS3036-7P
Manufacturer Infineon
Description Power MOSFET
Published Dec 8, 2016
Detailed Description   AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dynamic ...
Datasheet PDF File AUIRLS3036-7P PDF File

AUIRLS3036-7P
AUIRLS3036-7P


Overview
  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRLS3036-7P HEXFET® Power MOSFET VDSS RDS(on) typ.
max.
ID (Silicon Limited) ID (Package Limited) 60V 1.
5m 1.
9m 300A 240A   G Gate D2Pak 7 Pin AUIRLS3036-7P D Drain S Source Base ...



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