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BTB12-600TW3G

ON Semiconductor
Part Number BTB12-600TW3G
Manufacturer ON Semiconductor
Description Triacs
Published Dec 8, 2016
Detailed Description BTB12-600TW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications w...
Datasheet PDF File BTB12-600TW3G PDF File

BTB12-600TW3G
BTB12-600TW3G

Overview
BTB12-600TW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features • Blocking Voltage to 600 V • On-State Current Rating of 12 A RMS at 80°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 10 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 1.
75 A/ms minimum at 110°C • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB12−600TW3G VDRM, VRRM 600 V On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.
3 ms) IT(RMS) ITSM I2t 12 A 126 A 6...


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