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S29PL127J

Cypress Semiconductor
Part Number S29PL127J
Manufacturer Cypress Semiconductor
Description Page Mode and Simultaneous Read/Write Flash memory device
Published Dec 9, 2016
Detailed Description S29PL-J 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ S29PL-J, 128-/64-/32-Mbit (8/4/2M × 1...
Datasheet PDF File S29PL127J PDF File

S29PL127J
S29PL127J

Overview
S29PL-J 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ S29PL-J, 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ Distinctive Characteristics Architectural Advantages ■ 128-/64-/32-Mbit Page Mode devices ❐ Page size of 8 words: Fast page read access from random locations within the page ■ Single power supply operation ❐ Full Voltage range: 2.
7 to 3.
6 V read, erase, and program operations for battery-powered applications ■ Simultaneous Read/Write Operation ❐ Data can be continuously read from one bank while executing erase/program functions in another bank ❐ Zero latency switching from write to read operations ■ FlexBank Architecture (PL127J/PL064J/PL032J) ❐ 4 separate banks, with up to two simultaneous operations per device ❐ Bank A: PL127J -16 Mbit (4 Kw  8 and 32 Kw  31) PL064J - 8 Mbit (4 Kw  8 and 32 Kw  15) PL032J - 4 Mbit (4 Kw  8 and 32 Kw  7) ❐ Bank B: PL127J - 48 Mbit (32 Kw  96) PL064J - 24 Mbit (32 Kw  48) PL032J - ...


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