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BSC014N03MSG

Infineon
Part Number BSC014N03MSG
Manufacturer Infineon
Description Power MOSFET
Published Dec 9, 2016
Detailed Description BSC014N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low...
Datasheet PDF File BSC014N03MSG PDF File

BSC014N03MSG
BSC014N03MSG

Overview
BSC014N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.
5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.
5 V 30 V 1.
4 mΩ 1.
75 100 A PG-TDSON-8 • Superior thermal resistance • Pb-free plating; RoHS compliant; • Halogen-free according to IEC61249-2-21 Type Package Marking BSC014N03MS G PG-TDSON-8 014N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=4.
5 V, T A=25 °C...


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