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BSC12DN20NS3G

Infineon
Part Number BSC12DN20NS3G
Manufacturer Infineon
Description Power MOSFET
Published Dec 9, 2016
Detailed Description Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...
Datasheet PDF File BSC12DN20NS3G PDF File

BSC12DN20NS3G
BSC12DN20NS3G

Overview
Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC12DN20NS3 G Product Summary VDS RDS(on),max ID 200 V 125 mΩ 11.
3 A PG-TDSON-8 Type BSC12DN20NS3 G Package PG-TDSON-8 Marking 12DN20NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS ...


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