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MRF8S21140HR3

NXP
Part Number MRF8S21140HR3
Manufacturer NXP
Description RF Power Field Effect Transistors
Published Dec 12, 2016
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/2010 RF Power Field Effect Transistors N...
Datasheet PDF File MRF8S21140HR3 PDF File

MRF8S21140HR3
MRF8S21140HR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.
0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) MRF8S21140HR3 MRF8S21140HSR3 2110-2170 MHz, 34 W AVG.
, 28 V W-CDMA, LTE LATERAL N-CH...


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