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MRF8S9102NR3

Freescale Semiconductor
Part Number MRF8S9102NR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Dec 12, 2016
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET De...
Datasheet PDF File MRF8S9102NR3 PDF File

MRF8S9102NR3
MRF8S9102NR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 920 MHz 940 MHz 960 MHz 23.
1 23.
1 22.
8 36.
4 36.
4 36.
6 6.
3 --35.
5 6.
2 --36.
1 6.
1 --35.
8 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 M...


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