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Si4943BDY

Vishay
Part Number Si4943BDY
Manufacturer Vishay
Description Dual P-Channel 20-V (D-S) MOSFET
Published Dec 13, 2016
Detailed Description New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.019 ...
Datasheet PDF File Si4943BDY PDF File

Si4943BDY
Si4943BDY

Overview
New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
019 @ VGS = −10 V −20 0.
031 @ VGS = −4.
5 V ID (A) −8.
4 −6.
7 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4943BDY—E3 Si4943BDY-T1—E3 (with Tape and Reel) FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Load Switching − Computer − Game Systems D Battery Switching − 2-Cell Li-Ion S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS −20 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg −8.
4 −6.
3 −6.
7 −5.
1 −30 −1.
7 −0.
9 2.
0 1.
1 ...


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