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BSF083N03LQG

Infineon
Part Number BSF083N03LQG
Manufacturer Infineon
Description Power-Transistor
Published Dec 13, 2016
Detailed Description BSF083N03LQ G OptiMOSTM2 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-r...
Datasheet PDF File BSF083N03LQG PDF File

BSF083N03LQG
BSF083N03LQG

Overview
BSF083N03LQ G OptiMOSTM2 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 8.
3 53 • Low profile (<0.
7 mm) • Double-sided cooling • Low parasitic inductance MG-WDSON-2 • 100% avalanche tested • Qualified for consumer level application • Compatible with DirectFET® package SQ footprint and outline 1) • Pb-free plating; RoHS compliant V mΩ A Type BSF083N03LQ G Package MG-WDSON-2 Outline SQ Marking 6003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 53 A V GS=10 V, T C=100 °C 33 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 13 Pulsed drain current3) Avalanche current, single pulse4) I D,pulse I AS T C=25 °C T C=25 °C 212 50 Avalanche energy, single pulse E AS I D=38 A, R GS=25 Ω 30 mJ Ga...


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