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BSZ068N06NS

Infineon
Part Number BSZ068N06NS
Manufacturer Infineon
Description Power-Transistor
Published Dec 13, 2016
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Datasheet PDF File BSZ068N06NS PDF File

BSZ068N06NS
BSZ068N06NS

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSZ068N06NS Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 60 V 6.
8 mW 40 A 19 nC 17 nC PG-TSDSON-8 (Fused Leads) Type Package Marking BSZ068N06NS PG-TSDSON-8 (Fused Leads) 068N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 40 A V GS=10 V, T C=100 °C 38 V GS=10 V, T C=25 °C, R thJA =60K/W2) 13 Pulsed drain current3) Avalanche energy, single pulse4) I D,pulse E AS T C=25 °C I D=20 A, R GS=25 W 160 43 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thi...


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