DatasheetsPDF.com

BUZ31H3046

Part Number	BUZ31H3046
Manufacturer	Infineon
Description	Power-Transistor
Published	Dec 13, 2016
Detailed Description	SIPMOS ® Power Transistor BUZ 31 H3046 • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead ...
Datasheet	BUZ31H3046 PDF File

Overview

SIPMOS ® Power Transistor BUZ 31 H3046 • N channel • Enhancement mode • Avalanche-rated • Normal Level .
Pb-free lead plating; RoHs compliant .
Halogen-free according to IEC61249-2-21 Type VDS BUZ 31 H3046 200 V ID 14.
5 A RDS(on) 0.
2 Ω Maximum Ratings Parameter Continuous drain current TC = 30 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 14.
5 A, VDD = 50 V, RGS = 25 Ω L = 1.
42 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chi...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)