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IPL60R104C7

Infineon
Part Number IPL60R104C7
Manufacturer Infineon
Description MOSFET
Published Dec 16, 2016
Detailed Description IPL60R104C7 MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower M...
Datasheet PDF File IPL60R104C7 PDF File

IPL60R104C7
IPL60R104C7

Overview
IPL60R104C7 MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •SMDpackagewithverylowparasiticinductanceforeasydevicecontrol •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4pinkelvinsourceconcept Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •OptimizedPCBassemblyandlayoutsolutions •Suitableforapplicationssuchasserver,telecomandsolar •Upto0.
5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.
g.
Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 RDS(on),max 104 Qg,typ 42 ID,pulse 83 ID,continuous @ Tj<150°C 35 V mΩ nC A A Eoss @4 00V 4.
95 µJ Body diode diF/dt 375 A/µs Type/OrderingCode IPL60R104C7 Package PG-VSON-4 Marking 60C7104 Final Data Sheet 1 ThinPAK8x8 Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 RelatedLinks see Appendix A Re...


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