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BSC100N03MSG

Infineon
Part Number BSC100N03MSG
Manufacturer Infineon
Description Power-Transistor
Published Dec 16, 2016
Detailed Description BSC100N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application (Noteboo...
Datasheet PDF File BSC100N03MSG PDF File

BSC100N03MSG
BSC100N03MSG

Overview
BSC100N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.
5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications VDS RDS(on),max ID 30 VGS=10 V VGS=4.
5 V 10 12 44 PG-TDSON-8 • Superior thermal resistance • Pb-free plating; RoHS compliant V mW A • Halogen-free according to IEC61249-2-21 Type BSC100N03MS G Package PG-TDSON-8 Marking 100N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=4.
5 V, T A=25 °C, R thJA=5...


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