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BCF120T

BeRex
Part Number BCF120T
Manufacturer BeRex
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
Published Dec 21, 2016
Detailed Description BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose n...
Datasheet PDF File BCF120T PDF File

BCF120T
BCF120T

Overview
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.
3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.
3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.
5 GHz.
This product is well suited for either wideband or narrow-band applications.
The BCF120T is produced using state of the art metallization and devices from each wafer are screened to insure reliability.
These chips utilize SI3N4 passivation for increased reliability.
Product Features • 28.
0 dBm Typical Output Power • 11.
0 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.
3 X 1200 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel • Test & Measurement ELECTRICAL CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 3V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch...


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