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IRL7472L1TRPbF

Infineon
Part Number IRL7472L1TRPbF
Manufacturer Infineon
Description Power MOSFET
Published Dec 21, 2016
Detailed Description Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bri...
Datasheet PDF File IRL7472L1TRPbF PDF File

IRL7472L1TRPbF
IRL7472L1TRPbF

Overview
Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7472L1TRPbF DirectFET™ N-Channel Power MOSFET  VDSS RDS(on) typ.
max @ VGS = 10V RDS(on) typ.
max @ VGS = 4.
5V ID (Package Limited) 40V 0.
34m 0.
45m 0.
52m 0.
70m 375A S S D S G S L8 S S D S S DirectFET™ ISOMETRIC Base part number Package Type IRL7472L1PbF Direct FET Large Can (L8) Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRL7472L1TRPbF RDS(on), Drain-to -Source On Resistance ( m) ID, Drain Current (A) 1.
6 ID = 195A 1.
4 1.
2 1.
0 0.
8 TJ = 125°C 0.
6 0.
4 0.
2 TJ = 25°C 0.
0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1.
Typical On-Resistance vs.
Gate Voltage 1 700 600 Limited by package 500 400 300 200 100 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2.
Maximum Drain Current vs.
Case Temperature 2016-10-14 IRL7472L1TRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM PD @TC = 25°C PD @TA = 25°C Pulsed Drain Current  Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics EAS (Thermally limit...


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