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HCS80R650E

Part Number	HCS80R650E
Manufacturer	SemiHow
Description	800V N-Channel Super Junction MOSFET
Published	Dec 22, 2016
Detailed Description	HCS80R650E Super Junction MOSFET August 2016 HCS80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM ...
Datasheet	HCS80R650E PDF File

Overview

HCS80R650E Super Junction MOSFET August 2016 HCS80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.
65 12 Unit V A ȍ nC Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDSID Power Dissipation Ope...

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