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HFW7N80

SemiHow
Part Number HFW7N80
Manufacturer SemiHow
Description 800V N-Channel MOSFET
Published Dec 22, 2016
Detailed Description HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.0 A FEATU...
Datasheet PDF File HFW7N80 PDF File

HFW7N80
HFW7N80

Overview
HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.
0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW7N80 HFI7N80 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 7.
0 4.
4 28 ρ30 580 7.
0 16.
7 4.
5 Power Dissipation (TA = 2...


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