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3CG751

Part Number	3CG751
Manufacturer	JCET
Description	PNP Transistor
Published	Dec 24, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 3CG751 TRANSISTOR (PNP) TO...
Datasheet	3CG751 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92MOD Plastic-Encapsulate Transistors 3CG751 TRANSISTOR (PNP) TO-92MOD FEATURE y High power amplifier y Low VCE(sat) 1.
EMITTER 2.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 3.
BASE VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.
5 A PC Collector Power Dissipation 0.
9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob IC= -100µA, IE=0 ...

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