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CJL818C

JCET
Part Number CJL818C
Manufacturer JCET
Description PNP Transistor
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) D...
Datasheet PDF File CJL818C PDF File

CJL818C
CJL818C

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) DESCRIPTIONS The device is manufactured in low voltage PNP Planar Technology with "Base Island layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
SOT-23-6L FEATURE Very low collector to emitter saturation voltage APPLICATIONS z Power management in portable equipments z Switching regulator in battery charge applications MARKING: 6 818C 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM Collector Current -Pulsed PC Collector Power Dissipation RθJA Thermal Resistance from Junction to Ambient Ptot Total Dissipation at TC = 25℃ (note 1) RθJC Thermal Resistance from Junction to Case (note 1) TJ Junction Temperature Tstg Storage Temperature Note 1...


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