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CJP07N65

JCET
Part Number CJP07N65
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 V(BR)DSS 650V N-Chan...
Datasheet PDF File CJP07N65 PDF File

CJP07N65
CJP07N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   1.
3Ω@10V ID 7.
4A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche ...


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