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CJP15H03

JCET
Part Number CJP15H03
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP15H03 N-Channel Power MO...
Datasheet PDF File CJP15H03 PDF File

CJP15H03
CJP15H03

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP15H03 N-Channel Power MOSFET DESCRIPTION TO-220-3L-C The CJP15H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
1.
GATE 2.
DRAIN 3.
SOURCE FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Excellent package for good heat dissipation z Special process technology for high ESD capability z Uninterruptible Power Supply EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temper...


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