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MGF65A3H

Sanken
Part Number MGF65A3H
Manufacturer Sanken
Description Trench Field Stop IGBT
Published Dec 26, 2016
Detailed Description VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Descri...
Datasheet PDF File MGF65A3H PDF File

MGF65A3H
MGF65A3H

Overview
VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H, MGF65A3H, and FGF65A3H are 650 V Field Stop IGBTs.
Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.
Thus, these Field Stop IGBTs can improve the efficiency of your circuit.
TO247-3L (4) TO3P-3L (4) Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant (1) (2) (3) TO3PF-3L (1) (2) (3) ● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 30 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.
9 V typ.
● tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
● VF----------------------------------------------------1.
8 V typ.
Applications ● Welding Converters ● PFC Circuit (1) (2) (3) (1) (2)(4) (1) Gate (2) Collector (3) Emitter (4) Collector (3) Selection Guide Part Number KGF65A3H MGF65A3H FGF65A3H Not to scale Package TO247-3L TO3P-3L TO3PF-3L xGF65A3H-DSE Rev.
1.
5 SANKEN ELCTRIC CO.
, LTD.
1 Feb.
19, 2018 http://www.
sanken-ele.
co.
jp/en © SANKEN ELECTRIC CO.
, LTD.
2016 KGF65A3H, MGF65A3H, FGF65A3H Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Voltage Gate to Emitter Voltage Symbol VCE VGE Continuous Collector Current (1) IC Pulsed Collector Current IC(PULSE) Diode Continuous Forward Current (1) IF Diode Pulsed Forward Current IF(PULSE) Short Circuit Withstand Time tSC Conditions TC = 25 °C TC = 100 °C PW ≤ 1 ms, duty cycle ≤ 1% TC = 25 °C TC = 100 °C PW ≤ 1 ms, duty cycle ≤ 1% VGE = 15 V, VCE = 400 V TJ = 175 °C Power Dissipation PD TC = 25 °C Operating Junction Temperature Storage Temperature Isolation Voltage TJ TSTG VISO(RMS) Between surface of case...


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