DatasheetsPDF.com

STP24N60DM2

STMicroelectronics
Part Number STP24N60DM2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Dec 28, 2016
Detailed Description STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PA...
Datasheet PDF File STP24N60DM2 PDF File

STP24N60DM2
STP24N60DM2

Overview
STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.
175 Ω typ.
, 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1.
Internal schematic diagram D(2, TAB) Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.
20 Ω 18 A • Extremely low gate charge and input capacitance • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • Extremely high dv/dt and avalanche capabilities Applications G(1) • Switching applications Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)