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40N03GP

Advanced Power Electronics
Part Number 40N03GP
Manufacturer Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Published Dec 29, 2016
Detailed Description Advanced Power Electronics Corp. AP40N03GP RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate C...
Datasheet PDF File 40N03GP PDF File

40N03GP
40N03GP

Overview
Advanced Power Electronics Corp.
AP40N03GP RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic Description G D S TO-220 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.
BVDSS RDS(ON) ID G 30V 17mΩ 40A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 40 30 169 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 2.
5 62 Unit ℃/W ℃/W 1 200910094 AP40N03GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.
5V, ID=16A Gate Threshold Voltage Forward Transconductance VDS=VGS, ID=250uA VDS=10V, ID=20A Drain-Source Leakage Current VDS=30V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=24V,VGS=0V Gate-Source Leakage Total Gate Charge2 VGS= +20V, VDS=0V ID=20A Gate-Source Charge VDS=24V Gate-Drain ("Miller") Charge Turn-on ...


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