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NGTB40N60FL2WG

ON Semiconductor
Part Number NGTB40N60FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Jan 2, 2017
Detailed Description NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTB40N60FL2WG PDF File

NGTB40N60FL2WG
NGTB40N60FL2WG

Overview
NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 80 40 Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 80 40 Diode Pulsed Current TPULSE Limited by TJ Max Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate−emitter voltage Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.
10) IFM 160 A ICM 160 A tSC 5 ms VGE $20 V $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD W 366 183 Operating junction temperature range TJ −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.
onsemi.
com 40 A, 600 V VCEsat = 1.
7 V EOFF = 0.
44 mJ C G E G C E TO−247 CASE 340AL MARKING DIAGRAM 40N60FL2 AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package NGTB40N60FL2WG TO−247 (Pb−Free) S...


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