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NGTB40N60L2WG

ON Semiconductor
Part Number NGTB40N60L2WG
Manufacturer ON Semiconductor
Description IGBT
Published Jan 2, 2017
Detailed Description NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) T...
Datasheet PDF File NGTB40N60L2WG PDF File

NGTB40N60L2WG
NGTB40N60L2WG

Overview
NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for Low VCEsat • 5 ms Short−Circuit Capability • This is a Pb−Free Device Typical Applications • Motor Drive Inverters • Industrial Switching • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC A 80...


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