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CJU02N65

JCET
Part Number CJU02N65
Manufacturer JCET
Description N-Channel Power MOSFET
Published Jan 3, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N65 N-Channel Power MOSF...
Datasheet PDF File CJU02N65 PDF File

CJU02N65
CJU02N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-252-2L 1.
GATE 2.
DRAIN 3.
SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purpo...


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