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MDD3N50

MagnaChip
Part Number MDD3N50
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Jan 6, 2017
Detailed Description MDD3N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDD3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω...
Datasheet PDF File MDD3N50 PDF File

MDD3N50
MDD3N50

Overview
MDD3N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDD3N50 N-Channel MOSFET 500V, 2.
8 A, 2.
5Ω General Description The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD3N50 is suitable device for SMPS, HID and general purpose applications.
Features „ VDS = 500V „ ID = 2.
8A „ RDS(ON) ≤ 2.
5Ω Applications „ Power Supply „ PFC „ Ballast @VGS = 10V @VGS = 10V Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt...


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