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3DD13005ND86

JCET
Part Number 3DD13005ND86
Manufacturer JCET
Description NPN Transistor
Published Jan 8, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13005ND86 TRANSISTOR (N...
Datasheet PDF File 3DD13005ND86 PDF File

3DD13005ND86
3DD13005ND86

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13005ND86 TRANSISTOR (NPN) TO-220-3L FEATURES z Power switching applications z Low saturation voltage z High speed switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1.
BASE 2.
COLLECTOR 3.
EMITTER Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 420 9 4 2 150 -55-150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)C=BO IC= 1mA,IE 0 V(BR)CE=O IC=10mA,IB 0 V(B=R)EBO IE=1mA,IC 0 Collector cut-off current Collector cut-off current Emitter cut-off current ICBO =VCB=700V,IE 0 ICEO =VCE=400V,IB 0 =IEBO VEB=7V,IC 0 DC current...


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