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3DD13007N36

Part Number	3DD13007N36
Manufacturer	JCET
Description	NPN Transistor
Published	Jan 8, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13007N36 TRANSISTOR (NP...
Datasheet	3DD13007N36 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13007N36 TRANSISTOR (NPN) TO-220-3L FEATURES z Power switching applications 1.
BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 8 2 150 -55~150 Unit V V V A W ℃ ℃ 2.
COLLECTOR 3.
EMITTER 123 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown ...

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