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AS4DDR264M72PBG1

Micross
Part Number AS4DDR264M72PBG1
Manufacturer Micross
Description 4.8 Gb SDRAM-DDR2
Published Jan 8, 2017
Detailed Description iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcir...
Datasheet PDF File AS4DDR264M72PBG1 PDF File

AS4DDR264M72PBG1
AS4DDR264M72PBG1


Overview
iPEM 4.
8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM • 208 Plastic Ball Grid Array (PBGA), 16 x 23mm • 1.
00mm ball pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eight internal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes (I/T Version) On Die Termination (ODT) Adjustable data – output drive strength 1.
8V ±0.
1V common core power and I/O supply Programmable CAS latency: 3, 4, 5, 6 or 7 Posted CAS additive latency: 0, 1, 2, 3, 4 or 5 Write latency = Read latency - 1* tCK Organized as 64M x 72 Weight: AS4DDR264M72PBG1 ~ 2.
0 grams typical BENEFITS 6...



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