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AS4SD8M16

Part Number	AS4SD8M16
Manufacturer	Micross
Description	128 Mb: 8 Meg x 16 SDRAM
Published	Jan 8, 2017
Detailed Description	SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) proces...
Datasheet	AS4SD8M16 PDF File

Overview

SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT & ET) • 64ms, 4,096-cycle refresh (IT) • 24ms 4,096 cycle recfresh (XT) • WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs and outputs • Single +3.
3V ±0.
3V power supply OPTIONS • Plastic Package 54-pin TSOPII (400 mil) (Pb/Sn finish or RoHS available) MARKING DG No.
901 • Timing (Cycle Time) 7.
5ns @ CL = 3 (PC133) or 10ns @ CL = 2 (PC100) -75 • Operating Temperature Range...

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