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CJU50N06

JCET
Part Number CJU50N06
Manufacturer JCET
Description N-Channel Power MOSFET
Published Jan 8, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N06 N-Channel Power MOSFE...
Datasheet PDF File CJU50N06 PDF File

CJU50N06
CJU50N06

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N06 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply TO-252-2L 1.
GATE 2.
DRAIN 3.
SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Single Pulsed Avalanche Energy* EAS Power Dissipation PD Thermal Resistance from Junction to Ambient RθJA ...


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