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FDMS86202ET120

Fairchild Semiconductor
Part Number FDMS86202ET120
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTr...
Datasheet PDF File FDMS86202ET120 PDF File

FDMS86202ET120
FDMS86202ET120

Overview
FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.
2 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.
2 mΩ at VGS = 10 V, ID = 13.
5 A „ Max rDS(on) = 10.
3 mΩ at VGS = 6 V, ID = 11.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr...


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