DatasheetsPDF.com

FDMC86570LET60

Fairchild Semiconductor
Part Number FDMC86570LET60
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTr...
Datasheet PDF File FDMC86570LET60 PDF File

FDMC86570LET60
FDMC86570LET60

Overview
FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.
3 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.
3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 6.
5 mΩ at VGS = 4.
5 V, ID = 15 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion „ Pin 1 Pin 1 SS SG S S D D D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)