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FDMC86340ET80

Fairchild Semiconductor
Part Number FDMC86340ET80
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power T...
Datasheet PDF File FDMC86340ET80 PDF File

FDMC86340ET80
FDMC86340ET80

Overview
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.
5 mΩ Features General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 6.
5 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 8.
5 mΩ at VGS = 8 V, ID = 12 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Con...


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