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FDG8850NZ

Fairchild Semiconductor
Part Number FDG8850NZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0....
Datasheet PDF File FDG8850NZ PDF File

FDG8850NZ
FDG8850NZ

Overview
FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.
75A,0.
4Ω Features „ Max rDS(on) = 0.
4Ω at VGS = 4.
5V, ID = 0.
75A „ Max rDS(on) = 0.
5Ω at VGS = 2.
7V, ID = 0.
67A „ Very low level gate drive requirements allowing operation in 3V circuits(VGS(th) <1.
5V) „ Very small package outline SC70-6 „ RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage application...


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