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FDG8842CZ

Fairchild Semiconductor
Part Number FDG8842CZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0....
Datasheet PDF File FDG8842CZ PDF File

FDG8842CZ
FDG8842CZ

Overview
FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.
75A,0.
4Ω; Q2:–25V,–0.
41A,1.
1Ω Features Q1: N-Channel „ Max rDS(on) = 0.
4Ω at VGS = 4.
5V, ID = 0.
75A „ Max rDS(on) = 0.
5Ω at VGS = 2.
7V, ID = 0.
67A Q2: P-Channel „ Max rDS(on) = 1.
1Ω at VGS = –4.
5V, ID = –0.
41A „ Max rDS(on) = 1.
5Ω at VGS = –2.
7V, ID = –0.
25A „ Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.
5V) „ Very small package outline SC70-6 General Description These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Since bias resistors are not required, this dual digital F...


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