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FDD306P

Fairchild Semiconductor
Part Number FDD306P
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Fea...
Datasheet PDF File FDD306P PDF File

FDD306P
FDD306P

Overview
FDD306P P-Channel 1.
8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.
8V Specified PowerTrench® MOSFET Features ■ –6.
7 A, –12 V.
RDS(ON) = 28 mΩ @ VGS = –4.
5 V RDS(ON) = 41 mΩ @ VGS = –2.
5 V RDS(ON) = 90 mΩ @ VGS = –1.
8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter General Description This P-Channel 1.
8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management.
D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistan...


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