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Si7682DP

Vishay
Part Number Si7682DP
Manufacturer Vishay
Description N-Channel 30-V (D-S) MOSFET
Published Jan 11, 2017
Detailed Description N-Channel 30-V (D-S) MOSFET Si7682DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0090 at VGS = 10 V 0...
Datasheet PDF File Si7682DP PDF File

Si7682DP
Si7682DP


Overview
N-Channel 30-V (D-S) MOSFET Si7682DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
0090 at VGS = 10 V 0.
0130 at VGS = 4.
5 V ID (A)a 20 20 Qg (Typ.
) 11 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested PowerPAK SO-8 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3G 4 Bottom View Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free) Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 ...



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