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FDB3502

Fairchild Semiconductor
Part Number FDB3502
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDB3502 N-Channel Power Trench® MOSFET May 2008 FDB3502 N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ tm Features G...
Datasheet PDF File FDB3502 PDF File

FDB3502
FDB3502

Overview
FDB3502 N-Channel Power Trench® MOSFET May 2008 FDB3502 N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ tm Features General Description „ Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ Synchronous rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limi...


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