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FDB082N15A

Fairchild Semiconductor
Part Number FDB082N15A
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDB082N15A — N-Channel PowerTrench® MOSFET April 2015 FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.2 mΩ F...
Datasheet PDF File FDB082N15A PDF File

FDB082N15A
FDB082N15A

Overview
FDB082N15A — N-Channel PowerTrench® MOSFET April 2015 FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.
2 mΩ Features • RDS(on) = 6.
7 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 64.
5 nC (Typ.
) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives an...


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