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FDP10N60ZU

Fairchild Semiconductor
Part Number FDP10N60ZU
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω April 2009 U...
Datasheet PDF File FDP10N60ZU PDF File

FDP10N60ZU
FDP10N60ZU

Overview
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.
8Ω April 2009 UniFETTM tm Features • RDS(on) = 0.
65Ω ( Typ.
)@ VGS = 10V, ID = 4.
5A • Low gate charge ( Typ.
31nC) • Low Crss ( Typ.
15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D GDS TO-220 FDP Series GD S TO-220F FDPF Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Sourc...


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