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FDMS3660AS

Fairchild Semiconductor
Part Number FDMS3660AS
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N...
Datasheet PDF File FDMS3660AS PDF File

FDMS3660AS
FDMS3660AS

Overview
FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.
8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.
2 mΩ at VGS = 4.
5 V, ID = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant July 2013 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE Pin 1 Pin...


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