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TC511000J-85

Part Number	TC511000J-85
Manufacturer	Toshiba
Description	DRAM
Published	Jan 16, 2017
Detailed Description	TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC51100...
Datasheet	TC511000J-85 PDF File

Overview

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit.
The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad- vanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion...

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