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AD500-9

Silicon Sensor
Part Number AD500-9
Manufacturer Silicon Sensor
Description Avalanche Photodiode
Published Jan 17, 2017
Detailed Description AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristics: quantum efficien...
Datasheet PDF File AD500-9 PDF File

AD500-9
AD500-9

Overview
AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristics: quantum efficiency > 70 % at λ 890 - 915 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2µA) Temperature Coefficient of UBR Spectral Responsivity (at 905 nm; M = 100) Cut-off Frequency (-3dB; M = 100) 905 nm Rise Time (M = 100; 50 Ω) 905 nm Optimum Gain "Excess Noise" factor (M = 100) "Excess Noise" index (M = 100) Noise Current (M = 100) N.
E.
P.
(M = 100, 905 nm) Operating Temperature Storage Temperature 0.
196 mm2 ∅ 500 µm max.
5 nA typ.
0.
5 - 1 nA typ.
1.
2 pF 120 - 300 V typ.
> 200 V typ.
1.
55 V/K min.
48 A/W typ.
52 A/W typ.
0.
5 GHz 550 ps 50 - 60 typ.
2.
5 typ.
0.
2 max.
1 pA/Hz½ max.
2 * 10-14 W/Hz½ -20 .
.
.
+70 °C -55 .
.
.
+100 °C 1) measurement conditions: Setup of photo current 10 nA at M = 1 and...


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