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TC511002Z-12

Toshiba
Part Number TC511002Z-12
Manufacturer Toshiba
Description DRAM
Published Jan 18, 2017
Detailed Description TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC...
Datasheet PDF File TC511002Z-12 PDF File

TC511002Z-12
TC511002Z-12

Overview
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1 bit.
The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TC5ll002P/J/Z to be packaged in a standard 18 pin plastic DIP,.
26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The package size provides system bit densities and is compatible with ~videly available automated testing and insertion equipment.
System oriented features include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
"Test Mode" function is implemented from Revision C.
FEATURES • 1,048,576 words by 1 bit organization • Fast access time and...


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