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TMM2018AD-25

Toshiba
Part Number TMM2018AD-25
Manufacturer Toshiba
Description STATIC RAM
Published Jan 19, 2017
Detailed Description TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM20...
Datasheet PDF File TMM2018AD-25 PDF File

TMM2018AD-25
TMM2018AD-25

Overview
TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018AO-45 IOESCRI PTI ONI The TMM2018AD is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply.
Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA.
When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA.
Thus the TMM2018AD is most suitable for use in cache memory and high speed storage.
The ~12018AD is offered in a 24 pin standard cerdip package with 0.
3 inch width for high density assembly.
The T}~12018AD is fabricated with ion implanted N channel silicon gate MOS technology for high performance and high reliability.
IFEATURESI • Fast access time tACC...


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