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MDD1904

MagnaChip
Part Number MDD1904
Manufacturer MagnaChip
Description Single N-channel MOSFET
Published Jan 20, 2017
Detailed Description MDD1904 – Single N-Channel Trench MOSFET 100V MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140mΩ ㄹ General Desc...
Datasheet PDF File MDD1904 PDF File

MDD1904
MDD1904

Overview
MDD1904 – Single N-Channel Trench MOSFET 100V MDD1904 Single N-channel Trench MOSFET 100V, 10.
8A, 140mΩ ㄹ General Description The MDD1904 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD1904 is suitable device for DC to DC converter and general purpose applications.
Features  VDS = 100V  ID = 10.
8A @VGS = 10V  RDS(ON) (MAX) < 140mΩ @VGS = 10V < 150mΩ @VGS = 6.
0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun.
2021.
Version 1.
2 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 100 ±20 10.
8 8.
7 25 35.
8 22.
9 12.
5 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 52 3.
5 Unit oC/W Magnachip Semiconductor Ltd.
MDD1904 – Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDD1904RH Temp.
Range -55~150oC Package DPAK Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gfs Qg(10V) Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VSD trr Qrr Test Condition ID =...


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